Simulations show temperature drives ion tracks in GaN from discontinuous segments to continuous channels filled with nanobubbles, accompanied by decomposition into Ga clusters and N2 molecules plus zincblende nanodomains near dislocations.
(23) Jerabek, P.; Frenking, G
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Simulations of 710 MeV Bi ions on 10-100 nm SiC films show the hillock-to-crater transition temperature rises with thickness and approaches 1534 K for bulk surfaces.
citing papers explorer
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Atomistic Mechanisms of Temperature-Dependent Ion Track Formation in Gallium Nitride under Swift Heavy Ion Irradiation
Simulations show temperature drives ion tracks in GaN from discontinuous segments to continuous channels filled with nanobubbles, accompanied by decomposition into Ga clusters and N2 molecules plus zincblende nanodomains near dislocations.
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Swift heavy ion track formation in SiC films under high-temperature irradiation
Simulations of 710 MeV Bi ions on 10-100 nm SiC films show the hillock-to-crater transition temperature rises with thickness and approaches 1534 K for bulk surfaces.