A gate voltage changes the charge density of a charge-density-wave condensate in o-TaS3 nanowires up to 112 times more strongly than geometric capacitance predicts.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.str-el 1years
2025 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Giant Gate Response of the Charge in an Electron-Lattice Condensate
A gate voltage changes the charge density of a charge-density-wave condensate in o-TaS3 nanowires up to 112 times more strongly than geometric capacitance predicts.