A custom cryo-CMOS multiplexer enables parallel, hot-swappable characterization of several quantum devices at milli-Kelvin in a single fridge cool-down, demonstrated with quantum dots and InAs Hall mobility mapping.
Cryogenic MOSFET Threshold Voltage Model
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abstract
This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic carrier-density scaling, and incomplete ionization. We demonstrate that accounting for incomplete ionization in the expression of the threshold voltage is critical for an accurate estimation of the current. The model is validated with our experimental results from nMOSFETs of a 28-nm CMOS process. The developed model is a key element for a cryo-CMOS compact model and can serve as a guide to optimize processes for high-performance cryo-computing and ultra-low-power quantum computing.
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physics.app-ph 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
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Characterising Quantum Devices at Scale with Custom Cryo-CMOS
A custom cryo-CMOS multiplexer enables parallel, hot-swappable characterization of several quantum devices at milli-Kelvin in a single fridge cool-down, demonstrated with quantum dots and InAs Hall mobility mapping.