ODMR signatures from spin defect pairs are observed in cubic boron nitride, preserving all key properties identified in hexagonal boron nitride and enabling single-particle measurements.
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2 Pith papers cite this work. Polarity classification is still indexing.
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Chlorine defects in 4H-SiC provide telecom-band emission, sub-nanosecond lifetimes, room-temperature ODMR, and hyperfine-resolved spin control, positioning them as a candidate for chip-scale quantum memories.
citing papers explorer
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Optical spin defect pairs in cubic boron nitride
ODMR signatures from spin defect pairs are observed in cubic boron nitride, preserving all key properties identified in hexagonal boron nitride and enabling single-particle measurements.
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Telecom-band quantum memory with chlorine defects in silicon carbide
Chlorine defects in 4H-SiC provide telecom-band emission, sub-nanosecond lifetimes, room-temperature ODMR, and hyperfine-resolved spin control, positioning them as a candidate for chip-scale quantum memories.