Low-frequency 1/f noise and random telegraph noise in graphene devices with interdigitated electrodes scale with the inverse of the active area, suggesting a bulk origin.
Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors,
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1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Low-frequency 1/f noise and random telegraph noise in graphene devices with interdigitated electrodes scale with the inverse of the active area, suggesting a bulk origin.