In gamma-irradiated p-type silicon, changes in effective doping are about twice the boron-oxygen defect concentration, and the X-defect TSC signal may correspond to the divacancy.
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Defects and acceptor removal in 60Co {\gamma}-irradiated p-type silicon
In gamma-irradiated p-type silicon, changes in effective doping are about twice the boron-oxygen defect concentration, and the X-defect TSC signal may correspond to the divacancy.