Defect charge transition levels in ReS2 remain nearly unchanged from monolayer to bulk due to electronic energy minimization and structural relaxation counteracting quantum confinement and reduced dielectric screening, aided by weak interlayer coupling.
Variations in band edges and band gaps are directly influenced by the ICS in layered systems
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Persistence of Layer-Tolerant Defect Levels in ReS2
Defect charge transition levels in ReS2 remain nearly unchanged from monolayer to bulk due to electronic energy minimization and structural relaxation counteracting quantum confinement and reduced dielectric screening, aided by weak interlayer coupling.