Fluorination-induced AlFx with SiNx passivation suppresses defect-assisted leakage in p-Si/n-AlN heterojunction diodes while preserving forward conduction.
(c) Reconstructed band alignment of the Si/AlN heterojunction based on the XPS analysis
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Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface
Fluorination-induced AlFx with SiNx passivation suppresses defect-assisted leakage in p-Si/n-AlN heterojunction diodes while preserving forward conduction.