Reactive MD simulations of bilayer TaOx/HfO2 ReRAMs show forming begins with electric-field-driven Ta/Hf cation migration and anodic Ta depletion, while Joule heating accelerates filament growth through thermally activated oxygen-vacancy generation near the cathode.
Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO 2/metal structures
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Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations
Reactive MD simulations of bilayer TaOx/HfO2 ReRAMs show forming begins with electric-field-driven Ta/Hf cation migration and anodic Ta depletion, while Joule heating accelerates filament growth through thermally activated oxygen-vacancy generation near the cathode.