Pressure increases interlayer antiferromagnetic exchange and reduces the trivial transport gap in 5-SL MnBi2Te4, while the high-field Chern insulator gap stays nearly constant.
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Pressure-tunable phase transitions in atomically thin Chern insulator MnBi$_2$Te$_4$
Pressure increases interlayer antiferromagnetic exchange and reduces the trivial transport gap in 5-SL MnBi2Te4, while the high-field Chern insulator gap stays nearly constant.