Overview chapter surveying volatile and non-volatile memories including SRAM, DRAM, RRAM, MRAM, FeFET and cryogenic JJFET devices, with focus on principles, tradeoffs, and challenges.
A 65nm 8T sub-Vt SRAM employing sense-amplifier redundancy
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cs.AR 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Emerging memory technologies at room/cryogenic temperature
Overview chapter surveying volatile and non-volatile memories including SRAM, DRAM, RRAM, MRAM, FeFET and cryogenic JJFET devices, with focus on principles, tradeoffs, and challenges.