Resonant coupling of interfacial states controls TMR in Cr2C/TMDC/Cr2C junctions, and 4% biaxial strain raises the TMR ratio to 540% for MoS2 and 496% for WS2.
Hybridization between the bulk electrode states and the electronic states at the interface can induce gap states inside the semiconducting barrier
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Effects of Interfacial States and Strain on Tunnel Magnetoresistance in van der Waals Magnetic Tunnel Junctions
Resonant coupling of interfacial states controls TMR in Cr2C/TMDC/Cr2C junctions, and 4% biaxial strain raises the TMR ratio to 540% for MoS2 and 496% for WS2.