A detailed AlN-on-sapphire waveguide fabrication process combining shape-PEC electron beam lithography, a single ALD Al2O3 passivation layer, and a 400 °C rapid thermal anneal reaches 2.0 ± 0.3 dB/cm loss at 852 nm.
The commercialization of silicon photonics,
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Low Loss Aluminum Nitride Waveguide Fabrication: Propagation Loss Reduction Through ALD and RTA
A detailed AlN-on-sapphire waveguide fabrication process combining shape-PEC electron beam lithography, a single ALD Al2O3 passivation layer, and a 400 °C rapid thermal anneal reaches 2.0 ± 0.3 dB/cm loss at 852 nm.