A processability map linking Kerr self-focusing depth to separation stress and surface roughness is demonstrated for femtosecond-laser slicing of 4H-SiC wafers.
Title resolution pending
1 Pith paper cite this work, alongside 29 external citations. Polarity classification is still indexing.
1
Pith paper citing it
29
external citations · OpenAlex
citation-role summary
background 1
citation-polarity summary
fields
physics.optics 1years
2026 1verdicts
CONDITIONAL 1roles
background 1polarities
unclear 1representative citing papers
citing papers explorer
-
Self-Focusing Control for Depth-Precise Wafer Slicing of 4H-SiC in Femtosecond Laser Processing
A processability map linking Kerr self-focusing depth to separation stress and surface roughness is demonstrated for femtosecond-laser slicing of 4H-SiC wafers.