Fill factor losses in perovskite-silicon tandems arise from photoshunt due to charge transport layer mobility and series resistance, with the effect hidden in bottom-cell-limited configurations.
Internal voltages in GaInP∕ GaInAs ∕ Ge multijunction solar cells determined by electroluminescence measurements
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Characterizing Fill Factor Limitations in Perovskite-Silicon Tandem Solar Cells
Fill factor losses in perovskite-silicon tandems arise from photoshunt due to charge transport layer mobility and series resistance, with the effect hidden in bottom-cell-limited configurations.