Micromagnetic simulations of PdFe/Ir(111) show current-driven skyrmion edge accumulation and a Slonczewski Hall angle of 89.53 degrees, but the proposed OR/AND gates encode inputs in reprogrammed barrier settings rather than in skyrmion presence.
Voltage-controlled skyrmion manipulation chambers for neuromorphic computing,
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Skyrmion manipulation and logic gate functionality in transition metal multilayers
Micromagnetic simulations of PdFe/Ir(111) show current-driven skyrmion edge accumulation and a Slonczewski Hall angle of 89.53 degrees, but the proposed OR/AND gates encode inputs in reprogrammed barrier settings rather than in skyrmion presence.