A unified neural-network interatomic potential enables large-scale simulations that predict thermal boundary conductance at Ga2O3/SiC interfaces decreases with transport length, rises with temperature, and is higher for the (201) than the (100) orientation.
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy.J
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Physics-Grounded Understanding of Thermal Boundary Conductance between Ga$_2$O$_3$ and SiC from a Feedforward Neural Network Potential
A unified neural-network interatomic potential enables large-scale simulations that predict thermal boundary conductance at Ga2O3/SiC interfaces decreases with transport length, rises with temperature, and is higher for the (201) than the (100) orientation.