Sputtering Sb2S3 at low power yields near-stoichiometric films with vanishing crystalline-state extinction in the near infrared, enabling a 0.33 dB/π phase shifter at 1.55 μm.
Small-sized optical gate switch using Ge2Sb2Te5 phase -change material integrated with silicon waveguide,
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Low-loss Sb$_2$S$_3$ Optical Phase Shifter Enabled by Optimizing Sputtering Conditions
Sputtering Sb2S3 at low power yields near-stoichiometric films with vanishing crystalline-state extinction in the near infrared, enabling a 0.33 dB/π phase shifter at 1.55 μm.