DFT and tight-binding calculations show that Janus monolayers intercalated in bilayer graphene induce opposite Rashba spin-orbit coupling signs in the two graphene layers, enabling layer-selective spin current reversal by gating.
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4 Pith papers cite this work. Polarity classification is still indexing.
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Pith papers citing it
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2026 4representative citing papers
A sampled-partner approximation speeds up Pauli-consistent Monte Carlo for graphene with electron-electron scattering, enabling low-noise runs that expose grid-induced oscillations which can then be mitigated without changing the dynamics.
Junction-localized states are ubiquitous in graphite stacking junctions, with flat bands supported in nearly all configurations and nascent flat bands extending the effect into pure Bernal stacking.
Outer-tip trimming of metallic AGNR angle junctions preserves near-perfect Fermi-level conductance when zigzag segments stay scarce; remaining conductance tracks a geometric mean of pure-armchair and pure-zigzag bounds set by the edge-type ratio.
citing papers explorer
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Layer-selective chirality switch in bilayer graphene intercalated by Janus monolayers
DFT and tight-binding calculations show that Janus monolayers intercalated in bilayer graphene induce opposite Rashba spin-orbit coupling signs in the two graphene layers, enabling layer-selective spin current reversal by gating.
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Low-noise Pauli-consistent ensemble Monte Carlo for graphene with electron-electron scattering
A sampled-partner approximation speeds up Pauli-consistent Monte Carlo for graphene with electron-electron scattering, enabling low-noise runs that expose grid-induced oscillations which can then be mitigated without changing the dynamics.
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Electron localization, charge redistribution, and emergence of topological states at graphite junctions
Junction-localized states are ubiquitous in graphite stacking junctions, with flat bands supported in nearly all configurations and nascent flat bands extending the effect into pure Bernal stacking.
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Charge carrier flow through trimmed graphene nanoribbon junctions
Outer-tip trimming of metallic AGNR angle junctions preserves near-perfect Fermi-level conductance when zigzag segments stay scarce; remaining conductance tracks a geometric mean of pure-armchair and pure-zigzag bounds set by the edge-type ratio.