A proposed spintronic memristor uses electric-field control of skyrmion size in a synthetic antiferromagnet to achieve wide-range synaptic weights at 0.3 fJ energy consumption.
In 2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 2018; pp 539-544
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Voltage-controlled skyrmion-based artificial synapse in a synthetic antiferromagnet
A proposed spintronic memristor uses electric-field control of skyrmion size in a synthetic antiferromagnet to achieve wide-range synaptic weights at 0.3 fJ energy consumption.