V-doped Co2NiSe4 is predicted by DFT+U to have improved thermoelectric, magnetic, optical, and piezoelectric properties, with a claimed ZT of 1.1 at 900 K that is not derived in the paper.
Tariq, et al., Materials Science in Semiconductor Processing 173(–), 108768 (2024)
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Vanadium-Engineered Co2NiSe4 Nanomaterial: Coupled Thermoelectric, Piezoelectric, and Electronic Optimization via DFT+U for Advanced Energy Applications
V-doped Co2NiSe4 is predicted by DFT+U to have improved thermoelectric, magnetic, optical, and piezoelectric properties, with a claimed ZT of 1.1 at 900 K that is not derived in the paper.