A GW-based tight-binding model combined with Chen's derivative rule reproduces scanning tunneling spectra of Bi2Se3, Bi2Te2Se, and Bi2Te3 and reveals bulk and surface orbital contributions.
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Probing the Electronic Structure at the Boundary of Topological Insulators in the $\mathrm{Bi}_2\mathrm{Se}_3$ Family by Combined STM and AFM
A GW-based tight-binding model combined with Chen's derivative rule reproduces scanning tunneling spectra of Bi2Se3, Bi2Te2Se, and Bi2Te3 and reveals bulk and surface orbital contributions.