First-principles calculations identify MgO, rutile SiO2, and zincblende BeO as semiconductors with gaps up to 9.50 eV that host shallow dopants and mobile carriers.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2025 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Extreme-Band-Gap Semiconductors with Shallow Dopants and Mobile Carriers
First-principles calculations identify MgO, rutile SiO2, and zincblende BeO as semiconductors with gaps up to 9.50 eV that host shallow dopants and mobile carriers.