Graphene EMR devices achieve record room-temperature magnetoresistance (4.6 × 10^7%) and sensitivity (104 kΩ/T), and daisy-chaining them increases sensitivity linearly.
Figure 2(a) shows the room-temperature serial resistance of all three devices as a function of B and Vg, measured in the 2-terminal configuration at terminals 3 and 9
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Extraordinary magnetoresistance in high-quality graphene devices with daisy chains and Fermi-level pinning
Graphene EMR devices achieve record room-temperature magnetoresistance (4.6 × 10^7%) and sensitivity (104 kΩ/T), and daisy-chaining them increases sensitivity linearly.