Sparse sampling of reflectance with five strategically chosen near-IR bandpass filters combined with a multivariate Gaussian model enables non-destructive thickness mapping of 3R-MoS2 on PDMS up to 691 nm with average 8.3 nm 95% CI width.
arXiv preprint arXiv:2512.15337 , year=
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Wafer-scale MOCVD-grown GaSe 2D nanosheets show defect-induced localized emission with single-photon character (g2(0)=0.15) suitable for classical and non-classical light sources.
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Sparse Spectral Imaging for Thickness Mapping of 3R-MoS$_2$ on PDMS
Sparse sampling of reflectance with five strategically chosen near-IR bandpass filters combined with a multivariate Gaussian model enables non-destructive thickness mapping of 3R-MoS2 on PDMS up to 691 nm with average 8.3 nm 95% CI width.
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Localized Excitonic Emission in Wafer-Scale MOCVD-Grown GaSe 2D Nanosheets for Classical and Non-Classical Light Sources
Wafer-scale MOCVD-grown GaSe 2D nanosheets show defect-induced localized emission with single-photon character (g2(0)=0.15) suitable for classical and non-classical light sources.