Top gating with a printable hBN ionogel tunes the electron-hole balance and compensation field in epitaxial Bi(111) films at voltages below 0.5 V, with a polarity dependence inconsistent with rigid-band Fermi level shifts.
Application of a positive Vg presumably reinforces the intrinsic surface electric field and thereby strengthens the Rashba splitting
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Gate-tunable electronic properties of epitaxial Bi (111) films using a printable hexagonal boron nitride ionogel
Top gating with a printable hBN ionogel tunes the electron-hole balance and compensation field in epitaxial Bi(111) films at voltages below 0.5 V, with a polarity dependence inconsistent with rigid-band Fermi level shifts.