Ion-implanted amorphous germanium is p-type with hole mobility near 100 cm²/Vs, evidence that its valence-band states are extended rather than localized.
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Non-localized states and high hole mobility in amorphous germanium
Ion-implanted amorphous germanium is p-type with hole mobility near 100 cm²/Vs, evidence that its valence-band states are extended rather than localized.