Within the same nanotube, hBN substrate yields higher field-effect mobility than SiO2 but similar thermally activated transport energies near charge neutrality.
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Substrate-dependent electrical transport in individual single-walled carbon nanotubes grown across SiO$_2$ and hexagonal boron nitride
Within the same nanotube, hBN substrate yields higher field-effect mobility than SiO2 but similar thermally activated transport energies near charge neutrality.