Physics-informed active learning optimizes tri-gate FinFETs, identifying designs with 2x better switching efficiency and 3.3 A drive current in multi-fin setups.
Per- formance improvement and sub-60 mV/decade swing in AlGaN/GaN FinFETs by simultaneous activation of 2DEG and sidewall MOS chan- nels,
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PALTO: Physics-Informed Active Learning for Tri-Gate FinFET Design Optimization for Vertical Power Delivery
Physics-informed active learning optimizes tri-gate FinFETs, identifying designs with 2x better switching efficiency and 3.3 A drive current in multi-fin setups.