An end-to-end Spanish lipreading system based on the CTC/Attention architecture achieves state-of-the-art WER of 24.8% on VLRF and 34.5%/59.5% on LIP-RTVE speaker-dependent/independent partitions, with an ablation study and a new four-corpus benchmark.
Microscopic mechanism of van der Waals heteroepitaxy in the formation of MoS2/hBN vertical heterostructures
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abstract
Recent works have revealed that van der Waals (vdW) epitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to formation of self-aligned grains, which results in defect-free stitching between the grains. However, how the weak vdW interaction causes strong limitation on orientation of grains is still not understood yet. In this work, we have focused on investigation of mechanism of self-alignment of MoS2 grains in vdW epitaxial growth on hBN. Through calculation based on density functional theory and the Lennard-Jones potential, we found that interaction energy between MoS2 and hBN strongly depends both on size and orientation of MoS2. We also found that, when size of MoS2 is ca. 40 nm, rotational energy barrier can exceed ~ 1 eV, which should suppress rotation to limit orientation of MoS2 even at growth temperature.
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Evaluation of End-to-End Continuous Spanish Lipreading in Different Data Conditions
An end-to-end Spanish lipreading system based on the CTC/Attention architecture achieves state-of-the-art WER of 24.8% on VLRF and 34.5%/59.5% on LIP-RTVE speaker-dependent/independent partitions, with an ablation study and a new four-corpus benchmark.