In rhombohedral graphene, the displacement field needed to reach the layer-polarized insulator increases with layer count, and six-layer devices show surface-state-dominated transport with gate-selective Landau levels.
The rhombohedral graphene domain is identified using scanning near-field infrared microscope and isolated in-situ using the AFM cutting
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Layer-Number-Controlled Symmetry Breaking and Surface-State Transport in Rhombohedral Graphene Multilayers
In rhombohedral graphene, the displacement field needed to reach the layer-polarized insulator increases with layer count, and six-layer devices show surface-state-dominated transport with gate-selective Landau levels.