In clean GaN at 6 K, direct exciton emission droops under strong laser excitation while phonon-assisted emission does not, which the authors trace to a momentum-space mismatch between electrons and holes.
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Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity
In clean GaN at 6 K, direct exciton emission droops under strong laser excitation while phonon-assisted emission does not, which the authors trace to a momentum-space mismatch between electrons and holes.