A DFT+U study finds that a two-unit-cell La3Ni2O7 film doped with roughly 0.3 holes per formula unit reproduces the ARPES-observed gamma Fermi pockets, linking hole doping and film thickness to ambient-pressure superconductivity.
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The effect of Carrier Doping and Thickness on the Electronic Structures of La$3$Ni$2$O$7$ Thin Films
A DFT+U study finds that a two-unit-cell La3Ni2O7 film doped with roughly 0.3 holes per formula unit reproduces the ARPES-observed gamma Fermi pockets, linking hole doping and film thickness to ambient-pressure superconductivity.