RF admittance measurements on Bi2Se3 capacitors yield Dirac fermion velocities of about 5 x 10^5 m/s at both the passivated surface and the hBN interface, and show the technique tolerates a trivial surface accumulation layer.
A graphene Zener–Klein 9 transistor cooled by a hyperbolic substrate
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors
RF admittance measurements on Bi2Se3 capacitors yield Dirac fermion velocities of about 5 x 10^5 m/s at both the passivated surface and the hBN interface, and show the technique tolerates a trivial surface accumulation layer.