Silicon doping in AlN produces DX-center self-compensation that caps free electron concentrations independent of dopant level, with less severe effects in AlGaN alloys or c-BN.
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cond-mat.mtrl-sci 2years
2026 2verdicts
UNVERDICTED 2representative citing papers
Revised defect transition levels and optical transitions in LiGa5O8 are obtained by allowing symmetry-breaking relaxations, with special focus on the Li vacancy as the shallowest acceptor and on carbon impurities.
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Self-compensation by silicon $DX$ centers in ultrawide-bandgap nitrides
Silicon doping in AlN produces DX-center self-compensation that caps free electron concentrations independent of dopant level, with less severe effects in AlGaN alloys or c-BN.
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Symmetry breaking structural relaxation and optical transitions of native defects and carbon impurities in LiGa$_5$O$_8$
Revised defect transition levels and optical transitions in LiGa5O8 are obtained by allowing symmetry-breaking relaxations, with special focus on the Li vacancy as the shallowest acceptor and on carbon impurities.