Simulation study of EBL-free AlInN nanowire DUV LEDs reports higher IQE without droop up to 1500 A/cm2 and strong TM polarization versus AlGaN devices.
High efficiency ultraviolet emission from AlxGa1− xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy
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Design and characteristic study of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
Simulation study of EBL-free AlInN nanowire DUV LEDs reports higher IQE without droop up to 1500 A/cm2 and strong TM polarization versus AlGaN devices.