First-principles calculations predict that zincblende TiSn is dynamically stable and a direct narrow-gap semiconductor with a GGA-PBE band gap of 0.3 eV.
Dai, Optoelectronic properties of narrow band gap semicon- ductors, De Gruyter, Berlin, M¨ unchen, Boston, 2015, pp
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First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor
First-principles calculations predict that zincblende TiSn is dynamically stable and a direct narrow-gap semiconductor with a GGA-PBE band gap of 0.3 eV.