Segmented temperature control reduces Ge diffusion to 5.6-7% of its 650°C value in Si/SiGe superlattices, enabling a 4+4 channel stack with sharp interfaces, preserved pseudomorphic strain, and low roughness.
V ery Low Temperature Epitaxy of Group -IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Si/SiGe multi-channel superlattice structure epitaxial growth with segmented temperature control for Next-Generation Logic Devices
Segmented temperature control reduces Ge diffusion to 5.6-7% of its 650°C value in Si/SiGe superlattices, enabling a 4+4 channel stack with sharp interfaces, preserved pseudomorphic strain, and low roughness.