In α-Fe₂PO₅, charge order and C-type antiferromagnetic stacking produce atom-selective spin channels for doped carriers with opposite polarizations on the two sublattices, enabling large conductance modulation in a proposed tunnel junction.
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Graphene phonon dispersion contains type-I and type-II Weyl-like phonons plus a nodal line with non-zero Berry phases of π and protected edge states.
A ferroelectric/antiferromagnet/ferroelectric trilayer enables symmetry-enforced reversal of altermagnetic spin splitting upon polarization flip, with the effect flipping the anomalous Hall signal, as shown in In2Se3/MnPTe3/In2Se3 calculations.
citing papers explorer
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Atom-selective spin-polarized transport in a charge-ordered altermagnet
In α-Fe₂PO₅, charge order and C-type antiferromagnetic stacking produce atom-selective spin channels for doped carriers with opposite polarizations on the two sublattices, enabling large conductance modulation in a proposed tunnel junction.
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Topological Weyl-like Phonons and Nodal Line Phonons in Graphene
Graphene phonon dispersion contains type-I and type-II Weyl-like phonons plus a nodal line with non-zero Berry phases of π and protected edge states.
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Symmetry-Enforced Ferroelectric Switching of Two-Dimensional Altermagnetism
A ferroelectric/antiferromagnet/ferroelectric trilayer enables symmetry-enforced reversal of altermagnetic spin splitting upon polarization flip, with the effect flipping the anomalous Hall signal, as shown in In2Se3/MnPTe3/In2Se3 calculations.