4H-SiC PIN detector maintains 99.24% charge collection efficiency and 45 ps time resolution after low-fluence Ta ion irradiation with minimal change in electrical properties.
A summary review of displacement damage from high energy radiation in silicon semiconductors and semiconductor devices
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Stable Charge Collection and Sub-45 ps Time Resolution in a 4H-SiC PIN Detector Irradiated With Low Fluence 16.5 MeV/u Ta Ions
4H-SiC PIN detector maintains 99.24% charge collection efficiency and 45 ps time resolution after low-fluence Ta ion irradiation with minimal change in electrical properties.