A combinatorial sputtering and semi-automated probing method produced IGZO transistor libraries with gradients in thickness, gallium content, channel length, and oxygen, confirming that off-current falls as gallium and oxygen increase and as channel length grows.
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High-throughput fabrication and semi-automated characterization of oxide thin film transistors
A combinatorial sputtering and semi-automated probing method produced IGZO transistor libraries with gradients in thickness, gallium content, channel length, and oxygen, confirming that off-current falls as gallium and oxygen increase and as channel length grows.