Two defect motifs, aligned Ge chains and overcoordinated Ge chains, are identified as the origins of conduction-band and valence-band trap states in amorphous GeSe.
L.; Kundu, S.; Hody, H.; Devulder, W.; Houdt, J
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Unveiling defect motifs in amorphous GeSe using machine learning interatomic potentials
Two defect motifs, aligned Ge chains and overcoordinated Ge chains, are identified as the origins of conduction-band and valence-band trap states in amorphous GeSe.