Field-free, all-electric writing of a van der Waals magnetoresistive memory at room temperature is achieved in TaIrTe4/Fe3GaTe2 by current-induced orbital magnetization tied to the Berry curvature dipole.
7(d), the transition of RMTJ be- tween high- and low-resistance states is achieved by applying current pulses in TaIrTe
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2024 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4
Field-free, all-electric writing of a van der Waals magnetoresistive memory at room temperature is achieved in TaIrTe4/Fe3GaTe2 by current-induced orbital magnetization tied to the Berry curvature dipole.