Edge conductivity in graphene drops to zero more slowly than bulk at charge neutrality, matching canted antiferromagnetic gap profiles, while differing in evolution from |ν|≥1 quantum Hall states.
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Homogeneous graphene/h-BN interfaces show strong vertical thermal conductance reduction under strain and twist, whereas heterogeneous interfaces are insensitive to twist but respond to strain.
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Microwave Imaging of Edge Conductivity in Graphene at Charge Neutrality and Quantum Hall States
Edge conductivity in graphene drops to zero more slowly than bulk at charge neutrality, matching canted antiferromagnetic gap profiles, while differing in evolution from |ν|≥1 quantum Hall states.
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Strain and Twist Engineering of Interfacial Thermal Transport in Homo- and Hetero-Interfaces of Graphene and Hexagonal Boron Nitride
Homogeneous graphene/h-BN interfaces show strong vertical thermal conductance reduction under strain and twist, whereas heterogeneous interfaces are insensitive to twist but respond to strain.