Experimental demonstration of hybrid cryogenic memory cells using spin Hall effect MTJs and cryotron selectors achieving ~8 pJ write energy and error rates below 10^{-6} at 4 K.
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Cryogenic Memory Architecture Integrating Spin Hall Effect based Magnetic Memory and Superconductive Cryotron Devices
Experimental demonstration of hybrid cryogenic memory cells using spin Hall effect MTJs and cryotron selectors achieving ~8 pJ write energy and error rates below 10^{-6} at 4 K.