DFT calculations show that doping a single layer of Si3N4 with electrons or holes switches it from insulator to metal, but the paper's electronegativity and conductivity interpretations are flawed.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2025 1verdicts
REJECT 1representative citing papers
citing papers explorer
-
Electronic structure of SLSiN under charge density modulation
DFT calculations show that doping a single layer of Si3N4 with electrons or holes switches it from insulator to metal, but the paper's electronegativity and conductivity interpretations are flawed.