Freestanding fluoropolymer (CYTOP) films are transferred as gate dielectrics onto hydrogen-terminated diamond FETs, giving ~7–8 MV/cm breakdown, ~400 cm²/V·s hole mobility, and ≤3×10¹¹ cm⁻²eV⁻¹ interface trap density.
Mobility -Enhanced Normally Off Hydrogen - Terminated Diamond FET With Low Interface State Density Using Al2O3/Nd Gate Stack
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Transfer of Freestanding Fluoropolymer Films for Advanced Semiconductor Devices
Freestanding fluoropolymer (CYTOP) films are transferred as gate dielectrics onto hydrogen-terminated diamond FETs, giving ~7–8 MV/cm breakdown, ~400 cm²/V·s hole mobility, and ≤3×10¹¹ cm⁻²eV⁻¹ interface trap density.