Exciton transfer from MoSe2 to graphene is governed by charge tunneling on a 2.5 ps timescale and vanishes with a 1 nm dielectric spacer, while Förster-type dipolar transfer shows no measurable effect on bright excitons.
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Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
Exciton transfer from MoSe2 to graphene is governed by charge tunneling on a 2.5 ps timescale and vanishes with a 1 nm dielectric spacer, while Förster-type dipolar transfer shows no measurable effect on bright excitons.