Freestanding fluoropolymer (CYTOP) films are transferred as gate dielectrics onto hydrogen-terminated diamond FETs, giving ~7–8 MV/cm breakdown, ~400 cm²/V·s hole mobility, and ≤3×10¹¹ cm⁻²eV⁻¹ interface trap density.
Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule
1 Pith paper cite this work, alongside 43 external citations. Polarity classification is still indexing.
1
Pith paper citing it
43
external citations · OpenAlex
fields
cond-mat.mtrl-sci 1years
2025 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Transfer of Freestanding Fluoropolymer Films for Advanced Semiconductor Devices
Freestanding fluoropolymer (CYTOP) films are transferred as gate dielectrics onto hydrogen-terminated diamond FETs, giving ~7–8 MV/cm breakdown, ~400 cm²/V·s hole mobility, and ≤3×10¹¹ cm⁻²eV⁻¹ interface trap density.