All-MOCVD long-gate AlScN/GaN MIS-HEMTs on semi-insulating GaN substrates deliver 1 A/mm drain current, 63 mV/dec subthreshold swing, 25.8/51.1 GHz fT/fmax, 4.04 W/mm output power at 10 GHz with 22.7% PAE, and noise figure under 2.5 dB.
Progress in Near-Equilibrium Ammonothermal (NEAT) growth of GaN substrates for GaN-on-GaN semiconductor devices
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Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
All-MOCVD long-gate AlScN/GaN MIS-HEMTs on semi-insulating GaN substrates deliver 1 A/mm drain current, 63 mV/dec subthreshold swing, 25.8/51.1 GHz fT/fmax, 4.04 W/mm output power at 10 GHz with 22.7% PAE, and noise figure under 2.5 dB.